Redistribution
of a dopant, which implanted in a multilayer structure, due to pulse
laser annealing of radiative defects
E.L.
Pankratov
Institute
for Physics of Microstructures of Russian Academy of Sciences, Nizhny
Novgorod,
Russia
Received April 26, 2006
In this paper the analysis of dynamics of redistribution of dopant,
which was implanted into a multilayer structure, due to laser pulse with
account temperature dependence of diffusion coefficient, has been done. It has
been shown, that inhomogeneity of the solid state structure gives us
possibility to increase the sharpness of an implanted-junction rectifier, which
was produced by implantation, and homogeneity of dopant distribution in doped
area. Several conditions on spatial distribution of properties of doped by
implantation multilayer structure, which correspond to implanted-junction
rectifier with higher sharpness and higher homogeneity of dopant distribution
in doped area in comparison with homogeneous structure, have been determined.