Use of negative plasma-stable resist based on poly(ether sulfone) in the manufacture of impurity-sensitive superconductor structures

 

A. S. Ilyin, I. A. Kohn, A. G. Kovalenko

Kotel′nikov Institute of Radio-engineering and Electronics of RAS

 

The paper is received on November 20, 2014

 

Abstract: Use of negative plasma-stable resist based on poly(ether sulfone) for superconducting titanium microstructures fabrication using electron-beam lithography methods is investigated. Poly(ether sulphone) resist masks show high chemical, thermal and mechanical stability. This allows to avoid negative effects of resist outgassing and hardening, and fabricate titanium microstructures of high purity for their use in transition edge sensors. Resist’s negativity allows to decrease duration of exposure and to reduce risk related to thermal drift of specimen holder.

Keywords: poly(ether sulfone), electron-beam lithography, negative resist, outgassing, titanium, superconducting microstructures.