Sub-THz self-modulation of picosecond probing light pulse absorption in GaAs related to intrinsic picosecond stimulated emission of GaAs. Abstract.

Abstract. For the first time, sub-THz self-modulation of probing picosecond light pulse absorption was measured real-time in a thin (~ 1 micron) light-pumped GaAs layer. Pumping created stimulated picosecond emission in GaAs. Synchronization of the absorption self-modulation with picosecond self-modulation of depletion of conduction band bottom energy level electron population affects the period, phase constant and amplitude of absorption self-modulation. The depletion and its self-modulation were created by GaAs intrinsic emission. Synchronization arises to set detailed balance by the electron-LO-phonon interaction.

Key words: semiconductor, picosecond, stimulated emission, self-modulation, oscillations, absorption of light, electron-phonon interaction, stimulated Raman scattering of light, synchronization, coupled oscillators.

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For citation:

N.N.Ageeva, I.L.Bronevoi, D.N.Zabegaev, A.N.Krivonosov. Sub-THz self-modulation of picosecond probing light pulse absorption in GaAs related to intrinsic picosecond stimulated emission of GaAs. Zhurnal Radioelektroniki - Journal of Radio Electronics, 2017, No. 4. Available at http://jre.cplire.ru/jre/apr17/3/text.pdf. (In Russian)