Abstract. The purpose of the work
was to develop a scheme for the experimental setup and the methodology for
conducting studies to assess the stability of modern heterojunction light-emitting
semiconductor devices to the effect of intense microwave radiation. A
quantitative evaluation of the device's resistance to external microwave
radiation was made based on the values of the minimum power density of the
external electromagnetic field, under which either a decrease in the quality of
the device's functioning occurs or the device becomes inoperable. The
installation scheme was developed taking into account the results of
computational studies of the influence of the irradiation time and the pulse
parameters (duration, frequency) on the temperature regime of the
heterojunction light-emitting structure, obtained using the previously
developed thermoelectric model. A project of an experimental setup for studying
the effect of high-power microwave radiation on the characteristics of a heterojunction
light-emitting structure, possible modulator circuits for a three-centimeter
pulsed magnetron and a microwave path is presented. Preliminary estimates of
the durability of devices with heterojunction light-emitting structures (modern
LEDs were chosen) to the effect of intense electromagnetic radiation were
carried out in an experimental setup that included a generator of
quasi-continuous high-frequency oscillations. Dependences of the decrease in
the radiation power of modern LEDs on the number of cycles of exposure to
microwave radiation measured at different currents are obtained.
Key words: light-emitting diode,
microwave power, microwave path, pulse modulator, reduction of the optical
power.
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For citation:
V. L.
Vesnin,
V. A. Sergeev,
A. M. Hodakov, I. V. Frolov. The
stability of a heterojunction light-emitting device to the influence of
microwave radiation.
Zhurnal Radioelektroniki - Journal of
Radio Electronics. 2018. No. 8. Available at
http://jre.cplire.ru/jre/aug18/20/text.pdf
DOI
10.30898/1684-1719.2018.8.20