"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 8, 2018

contents of issue      DOI  10.30898/1684-1719.2018.8.20     full text in Russian (pdf)  



V. L. Vesnin 1, V. A. Sergeev 1,2, A. M. Hodakov 1, I. V. Frolov 1

1 Ulyanovsk branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Science, Goncharova 48/2, Ulyanovsk 432071, Russia

2 Ulyanovsk State Technical University, Severny Venets 32, Ulyanovsk, 432027, Russia


The paper is received on August 2, 2018


Abstract. The purpose of the work was to develop a scheme for the experimental setup and the methodology for conducting studies to assess the stability of modern heterojunction light-emitting semiconductor devices to the effect of intense microwave radiation. A quantitative evaluation of the device's resistance to external microwave radiation was made based on the values of the minimum power density of the external electromagnetic field, under which either a decrease in the quality of the device's functioning occurs or the device becomes inoperable. The installation scheme was developed taking into account the results of computational studies of the influence of the irradiation time and the pulse parameters (duration, frequency) on the temperature regime of the heterojunction light-emitting structure, obtained using the previously developed thermoelectric model. A project of an experimental setup for studying the effect of high-power microwave radiation on the characteristics of a heterojunction light-emitting structure, possible modulator circuits for a three-centimeter pulsed magnetron and a microwave path is presented. Preliminary estimates of the durability of devices with heterojunction light-emitting structures (modern LEDs were chosen) to the effect of intense electromagnetic radiation were carried out in an experimental setup that included a generator of quasi-continuous high-frequency oscillations. Dependences of the decrease in the radiation power of modern LEDs on the number of cycles of exposure to microwave radiation measured at different currents are obtained.

Key words: light-emitting diode, microwave power, microwave path, pulse modulator, reduction of the optical power.


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For citation:
V. L. Vesnin, V. A. Sergeev, A. M. Hodakov, I. V. Frolov. The stability of a heterojunction light-emitting device to the influence of microwave radiation. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2018. No. 8. Available at http://jre.cplire.ru/jre/aug18/20/text.pdf

DOI  10.30898/1684-1719.2018.8.20