Study of heterostructures by measuring surface potential

 

I. Yu.Butusov, Ya. A. Boldyreva, S. V. Popov

Military training and research center of the air force “Professor N. E. Zhukovsky and Y. A. Gagarin Air force Academy”,

Starykh Bol’shevikov str., 54 a, Voronezh 394064, Russia

 

The paper is received on June 11, 2019

 

Abstract. The work is devoted to the measurement of the surface potential of heterostructures. A surface potential meter for heterostructures was developed using the Kelvin dynamic probe method. A piezoelectric vibrator is used to vibrate the measuring probe. The output of the measuring probe is 5.0 eV, random measurement error is 100 mV.

Key words: surface potential, Kelvin probe, heterostructure.

References

1. Butusov, I. Yu., et. al. Measurement of the potential of the surface of silicon wafers in the production process of BIS. Electronic engineering, 1994, No. 4-5, pp. 104-105. (In Russian)

2. Kryachko, V. V., et. al.  Measurement of the profile of the density of charge States at oxidized silicon wafers. Electronic engineering, 1994, No. 4 -5, pp.109-111. (In Russian)

3. Fomenko V. S. Emissionnye svoistva materialov. Spravochnik [Emission properties of materials. Handbook], Kyeiv, Naukova Dumka Publ., 1981, 339 p. (In Russian)

 

For citation:

I. Yu.Butusov, Ya. A. Boldyreva, S. V. Popov. Study of heterostructures by measuring surface potential. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2019. No. 8. Available at http://jre.cplire.ru/jre/aug19/11/text.pdf

DOI  10.30898/1684-1719.2019.8.11