"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 8, 2019

contents of issue      DOI  10.30898/1684-1719.2019.8.5     full text in Russian (pdf)  

UDC 621.37:621.382.322

Template model of complementary field-effect transistors with a control pn junction


V. N. Biryukov 1, A. M. Pilipenko 1, N. N. Prokopenko 2, O. V Dvornikov 3

1 Institute for Radio Engineering Systems and Control of Southern Federal University, Nekrasovsky 44, Taganrog 347922, Russia

2 Don State Technical University, Gagarin sq. 1, Rostov-on-Don 344010, Russia

3 Minsk Scientific and Research Instrument-Making Institute, Ya. Kolasa str. 73, Minsk 220113, Belarus


The paper is received on August 8, 2019


Abstract. This paper introduces a simple compact model of complementary junction field-effect transistors (JFETs) with a channel inhomogeneously doped in the transverse direction. Complementary JFETs are used in combination with bipolar transistors in modern low-noise and radiation-resistant analog integrated circuits (ICs), which usually work at extremely low temperatures down to – 197 °C. Unlike other regional models, the proposed one is continuous together with its two first derivatives (C2-continuous). The model is based on the approximation of a gradual channel in the triode region of the I–V characteristic and a monotonic decrease in the output conductivity in their active region. The model assumes saturation at a lower drain voltage than the pinch-off voltage. The new model is validated by comparison to experimental data. On the base of this model the template model is introduced by the replacement of certain parameters of the original physical compact model by the quotient of power series of a gate and drain voltages. The parameters of the template model were determined by the method of least squares. The relative root-mean-square and maximum errors of I–V curves simulation for the template model is reduced by at least two times compared with the same error for the SPICE-model. In addition, the proposed template model has the following advantages in comparison with the standard SPICE-model: the absence of the modulation effect of the channel length at low drain voltages; monotonically decreasing differential output conductivity at any drain voltage; the continuity of the first two derivatives of the drain current.

Key words: model, JFET, simulation, template, root-mean-square, characterization.


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For citation:

V.N. Biryukov, A. M. Pilipenko, N. N. Prokopenko, O. V Dvornikov. Template model of complementary field-effect transistors with a control pn junction. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2019. No. 8. Available at http://jre.cplire.ru/jre/aug19/5/text.pdf

DOI  10.30898/1684-1719.2019.8.5