UDC 621.37:621.382.322
Template
model of complementary field-effect transistors with a control pn junction
V. N.
Biryukov 1, A. M. Pilipenko 1, N. N. Prokopenko 2,
O. V Dvornikov 3
1 Institute for Radio
Engineering Systems and Control of Southern Federal University, Nekrasovsky 44,
Taganrog 347922, Russia
2 Don State Technical
University, Gagarin sq. 1, Rostov-on-Don 344010, Russia
3 Minsk Scientific and Research
Instrument-Making Institute, Ya. Kolasa str. 73,
Minsk 220113, Belarus
The
paper is received on August
8, 2019
Abstract. This paper introduces a simple compact model of complementary junction field-effect
transistors (JFETs) with a channel inhomogeneously doped in the transverse
direction. Complementary JFETs are used in combination with bipolar transistors
in modern low-noise and radiation-resistant analog integrated circuits (ICs), which
usually work at extremely low temperatures down to – 197 °C. Unlike
other regional models, the proposed one is continuous together with its two
first derivatives (C2-continuous). The model is based on the approximation
of a gradual channel in the triode region of the I–V characteristic and a
monotonic decrease in the output conductivity in their active region. The model
assumes saturation at a lower drain voltage than the pinch-off voltage. The new
model is validated by comparison to experimental data. On the base of this
model the template model is introduced by the replacement of certain parameters
of the original physical compact model by the quotient
of power series of a gate and drain voltages. The parameters of the
template model were determined by the method of least squares. The relative
root-mean-square and maximum errors of I–V curves simulation for the template
model is reduced by at least two times compared with the same error for the SPICE-model.
In addition, the proposed template model has the following advantages in
comparison with the standard SPICE-model: the absence of the modulation effect
of the channel length at low drain voltages; monotonically decreasing differential
output conductivity at any drain voltage; the continuity of the first two
derivatives of the drain current.
Key words: model,
JFET, simulation, template, root-mean-square, characterization.
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For
citation:
V.N.
Biryukov, A. M. Pilipenko, N. N. Prokopenko,
O. V Dvornikov. Template model of complementary field-effect transistors
with a control pn junction. Zhurnal Radioelektroniki - Journal of Radio Electronics.
2019. No. 8. Available
at http://jre.cplire.ru/jre/aug19/5/text.pdf
DOI 10.30898/1684-1719.2019.8.5