Influence of the electric field on the photoluminescence of the
silicon nanocrystals in the SiO2
films
A. V. Gert 1,2, K. S. Zhuravlev1
1
Rzhanov Institute of
Semiconductor Physics, Siberian Branch of Russian Academy of
Sciences
1,2
Ioffe Physical Technical Institute
of Russian Academy of Sciences
Received December 11, 2012
Abstract:
In the paper
the investigations of electric field influence on photoluminescence of the
silicon nanocrystals formed in the dioxide silicon layer are carried out. It has
been found that applying of external electric field leads to the red shift of
the maximum of the photoluminescence band of the silicon nanocrystals and to the
reducing of photoluminescence intensity.
Keywords:
photoluminescence, silicon nanocrystal, silicon oxide film, influence of
electric field.