Abstract. The
results of the development and research of the microwave source with pulse
compression at the output of a semiconductor generator are given. As a result,
a model of a microwave source layout was developed with the following
parameters: peak power 1.78 kW, pulse duration at -3 dB level 5 ns, pulse
repetition rate 250 Hz, carrier frequency 848 MHz.
Key words: amplifier,
microwave compressor, nanosecond pulse.
References
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A.N., Yushkov Yu.G.
Moschnye SVCh-inpul'sy nanosekundnoy dlitel'nosti
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A.N.,
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S.V., Chumerin P.Yu., Yushkov Yu.G.
Receiving
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For citation:
A. A. Nikiforov, P. Yu.
Chumerin, V. N.
Slinko, V. A. Vaulin. L-band semiconductor sensor with pulse compression.
Zhurnal Radioelektroniki - Journal of
Radio Electronics. 2018. No.
12. Available at
http://jre.cplire.ru/jre/dec18/18/text.pdf
DOI
10.30898/1684-1719.2018.12.18