"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 12, 2018

contents of issue      DOI  10.30898/1684-1719.2018.12.18     full text in Russian (pdf)  

L-band semiconductor sensor with pulse compression

 

A. A. Nikiforov, P. Yu. Chumerin, V. N. Slinko, V. A. Vaulin
Tomsk Polytechnical University,
30, Lenin Avenue, Tomsk 634050, Russia

 

The paper is received on December 14, 2018

 

Abstract. The results of the development and research of the microwave source with pulse compression at the output of a semiconductor generator are given. As a result, a model of a microwave source layout was developed with the following parameters: peak power 1.78 kW, pulse duration at -3 dB level 5 ns, pulse repetition rate 250 Hz, carrier frequency 848 MHz.

Key words: amplifier, microwave compressor, nanosecond pulse.

References

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4.  Didenko A.N., Novikov S.A., Razin S.V., Chumerin P.Yu., Yushkov Yu.G. The formation of powerful ultra-wideband radio signals by sequential time compression of microwave energy. Doklady AN SSSR - Doklady Physics, 1991, Vol. 32, No. 3, pp. 518-520 (In Russian)

5.   Razin S.V., Chumerin P.Yu., Yushkov Yu.G.  Receiving powerful ultra-wideband radio pulses using resonant drivers. Pis'ma v ZhTF - Technical Physics Letters, 1991, Vol. 17, No. 13, pp. 3739. (In Russian)

 

For citation:
A. A. Nikiforov, P. Yu. Chumerin, V. N. Slinko, V. A. Vaulin. L-band semiconductor sensor with pulse compression. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2018. No. 12. Available at http://jre.cplire.ru/jre/dec18/18/text.pdf

DOI  10.30898/1684-1719.2018.12.18