"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 12, 2018

contents of issue      DOI  10.30898/1684-1719.2018.12.6     full text in Russian (pdf)  

Physical research of polar dependent electro migration in silicon (PDEM)


B. A. Panfilov

 Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, Vvedensky Sq.1, Fryazino Moscow region 141190, Russia


The paper is received on November 28, 2018


Abstract. Under the action of a pulse structure applied to the electrodes, a region of thermal cord (RTC) is formed. RTC is located in the volume of silicon, has the shape of a cylinder connecting the structure's electrodes. With further increase of such parameters as the electric field intensity, the density of the electric current and the temperature, the process of polar dependent electro migration in silicon (PDEM) of the atoms of the metal of the electrode in the RTC begins.  As a result of this, the RTC is transformed into a cylindrical capillary shape, connecting the structure's electrodes and filled with a liquid metal-like alloy (LMA) electrode-metal - silicon. This process has been termed “formating”. As a result of the passage of a current pulse in the direction opposite to the molding current, through a capillary filled with cooled LMA, the process of “switching off” occurs. Switching off - complete or partial extrusion of the liquid simulator from a capillary under the action of Laplace pressure forces. As a result of the passage of a current pulse through an empty capillary in the direction coinciding with the direction of the current of the molding, the capillary is refilled with LMA. This process is called “inclusion”. The application to the test structure of a sequence of corresponding pulses allows switching on and off about 104 times while preserving any state in a non-volatile manner for an arbitrarily long time. As a result of the passage of an increasing current pulse through a capillary filled with a cooled metal-like alloy, in the direction of the forming current, after the current reaches a certain critical value, resistance oscillations are observed. This process is called the “trimming” process. It is characterized by a sharp increase in resistance with an increase in current to the next critical value. After each such oscillation, the resistance decreases. As a result, a part of the LMA is squeezed out of the capillary, at the same time around the capillary there is formed a RTC of the tubular form. It can be argued that the set of  PDEM processes has no analogues.

Key words: polar dependent electro migration in silicon, thermal cord, metal-jumper.


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For citation:
B. A. Panfilov. Physical research of polar dependent electro migration in silicon (PDEM). Zhurnal Radioelektroniki - Journal of Radio Electronics. 2018. No. 12. Available at http://jre.cplire.ru/jre/dec18/6/text.pdf

DOI  10.30898/1684-1719.2018.12.6