Abstract. Under the action of a pulse
structure applied to the electrodes, a region of thermal cord (RTC) is formed.
RTC is located in the volume of silicon, has the shape of a cylinder connecting
the structure's electrodes. With further increase of such parameters as the
electric field intensity, the density of the electric current and the temperature,
the process of polar dependent electro migration in silicon (PDEM) of the atoms of the metal of the
electrode in the RTC begins. As a result of this, the RTC is transformed into
a cylindrical capillary shape, connecting the structure's electrodes and filled
with a liquid metal-like alloy (LMA) electrode-metal - silicon. This process
has been termed “formating”. As a result of the passage of a current pulse in
the direction opposite to the molding current, through a capillary filled with
cooled LMA, the process of “switching off” occurs. Switching off - complete or
partial extrusion of the liquid simulator from a capillary under the action of
Laplace pressure forces. As a result of the passage of a current pulse through
an empty capillary in the direction coinciding with the direction of the
current of the molding, the capillary is refilled with LMA. This process is
called “inclusion”. The application to the test structure of a sequence of
corresponding pulses allows switching on and off about 104 times
while preserving any state in a non-volatile manner for an arbitrarily long
time. As a result of the passage of an increasing current pulse through a
capillary filled with a cooled metal-like alloy, in the direction of the
forming current, after the current reaches a certain critical value, resistance
oscillations are observed. This process is called the “trimming” process. It is characterized by a sharp
increase in resistance with an increase in current to the next critical value.
After each such oscillation, the resistance decreases. As a result, a part of the LMA is
squeezed out of the capillary, at the same time around the capillary there is
formed a RTC of the tubular form. It can be argued that the set of PDEM processes has no analogues.
Key words: polar dependent electro
migration in silicon, thermal cord, metal-jumper.
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