Journal of Radio Electronics. eISSN 1684-1719. 2023. №12
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DOI: https://doi.org/10.30898/1684-1719.2023.12.28

 

VARIATIONS IN RADIATION POWER
OF ALGAINP-BASED LIGHT-EMITTING DIODES
UNDER THE INFLUENCE OF FAST NEUTRONS

 

K.N. Orlova1,2, A.V. Gradoboev1, A.R. Rasul2

 

1National Research Tomsk Polytechnic University,
634050, Russia, Tomsk, Lenina, str., 30

2National Research Nuclear University "MEPhI" (Moscow Engineering Physics Institute),
115409 Russia, Moscow, Kashirskoe Highway, 31

 

The paper was received Ocober 1, 2023.

 

Abstract. The results of the study on the degradation of AlGaInP red (630 nm) light-emitting diode parameters under fast neutron irradiation are presented. The study showed that in the region of LEDs, an uneven drop in radiation power is characterized, for high currents, a smaller decrease in power and a constant angle of inclination of the curve are characteristic, while in the region of low currents, with an increase in neutron fluence, the angle of inclination of the curve describing this process increases. A feature of the studied LEDs for short-circuit and breakage modes is the restoration of radiation power at the first stage of irradiation, which is explained by the relaxation of mechanical stresses during partial annealing of structural defects under the influence of low fluences.

Key words: AlGaInP, radiation resistance, light-emitting diodes.

Corresponding author: Ksenia Nikolaevna Orlova, KNOrlova@mephi.ru

References

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For citation:

Orlova K.N., Gradoboev A.V., Rasul A.R. Variations in radiation power of AlGaInP-based light-emitting diodes under the influence of fast neutrons. // Journal of Radio Electronics. – 2023. – №. 12. https://doi.org/10.30898/1684-1719.2023.12.28