Journal of Radio Electronics. eISSN 1684-1719. 2025. №12
Full text in Russian (pdf)
DOI: https://doi.org/10.30898/1684-1719.2025.12.4
NONLINEAR THERMAL MODEL OF A HIGH-TEMPERATURE
ANALOG MICROCIRCUITS WITH A NON-UNIFORM DISTRIBUTION
OF HEAT SOURCES IN THE CRYSTAL
I.V. Frolov1, A.M. Hodakov1, V.A. Sergeev1, D.V. Kleimenkin2
1Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of RAS
432011, Russia, Ulyanovsk, Goncharova str., 48/22Don State Technical University
344000, Russia, Rostov-on-Don, Gagarin Square, 1
The paper was received December 1, 2025.
Abstract. A thermal model of an operational amplifier chip operating in the ambient temperature range of −60 °C to 200 °C was developed using the Comsol Multiphysics computer simulation environment. The chip's primary thermal power dissipation is generated by the output stage transistors, which are located asymmetrically near the edge of the chip. The model takes into account the nonlinear temperature dependence of the chip material's thermal conductivity and the mutual thermal influence of heat sources. The temperature distribution nonuniformity coefficient within the chip's chip was calculated for various ambient temperatures for three chip materials: silicon, silicon carbide, and gallium arsenide. It was found that the temperature distribution nonuniformity within the chip increases nonlinearly with increasing ambient temperature. The lowest nonuniformity value is achieved in a crystal made of silicon carbide, while the highest is achieved in a crystal made of gallium arsenide: at a temperature of 200 ºC, the distribution nonuniformity coefficient in a GaAs crystal is 3.3 times higher than in a 4H-SiC crystal. It is shown that accounting for the temperature dependence of the chip's current consumption (power consumption) allows for an increase in modeling accuracy of up to 10%. The developed model can be used in the design of high-temperature analog integrated circuits, including those with nonuniform heat source distribution.
Key words: analog microcircuit, silicon, gallium arsenide, silicon carbide, 3D thermal model, temperature distribution non-uniformity.
Financing: The research has been carried out at the expense of the Grant of the Russian Science Foundation No. 23-79-10069, https://rscf.ru/en/project/23-79-10069/
Corresponding author: Frolov Ilya Vladimirovich, ilya-frolov88@mail.ru
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For citation:
Frolov I.V., Hodakov A.M., Sergeev V.A., Kleimenkin D.V. Nonlinear thermal model of a high-temperature analog microcircuits with a non-uniform distribution of heat sources in the crystal. // Journal of Radio Electronics. – 2025. – №. 12. https://doi.org/10.30898/1684-1719.2025.12.4 (In Russian)