Journal of Radio Electronics. eISSN 1684-1719. 2025. №12
Full text in Russian (pdf)
DOI: https://doi.org/10.30898/1684-1719.2025.12.8
The influence OF Fe2O3 ON THE CAPACITance
OF CARBON-COATED POROUS SILICON
D. M. Sedlovets, V.V. Starkov
Institute of Microelectronics Technology and High-purity Materials of RAS
142432, Russia, Chernogolovka, Academician Ossipyan str., 6
The paper was received December 5, 2025.
Abstract. Porous silicon (pSi) is a promising material for use in the electrodes of planar microcapacitors. These porous layers are integrated directly into the silicon wafer and exhibit high resistance to repeated charge-discharge cycles. Morphologically identical structures, silicon nanowires, are inferior to pSi layers in terms of stability but surpass them in capacitance. This work addresses the pressing problem of increasing pSi capacitance by additional coating deposition. The conditions for the electrochemical deposition of iron metahydroxide were experimentally determined. Annealing this iron metahydroxide results in the formation of iron (III) oxide on the surface of a carbon-coated pSi structure (pSi/C). Raman spectroscopy confirmed the crystalline structure of the iron oxide. For the first time, the effect of an additional α-Fe₂O₃ layer on the electrochemical properties of pSi/C was studied using cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy. The results showed that the electrochemical capacitance of the electrodes increased after Fe₂O₃ deposition. The resulting composites are highly stable, with no capacitance loss after 20,000 measurement cycles, and can be used as cathodes in asymmetric planar microcapacitors. Further studies include measurements in an organic electrolyte and the development and testing of an asymmetric device with pSi/C/Fe₂O₃ structures as the cathode.
Key words: porous silicon, carbon coating, iron oxide, electrochemical capacitance, planar microcapacitors.
Financing: This work was supported by the Russian Science Foundation under Grant no. 24-29-00545.
Corresponding author: Sedlovets Daria Mikhailovna, sedlovets@iptm.ru
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For citation:
Sedlovets D.M., Starkov V.V. The influence of Fe2O3 on the capacitance of carbon-coated porous silicon. // Journal of Radio Electronics. – 2025. – №. 12. https://doi.org/10.30898/1684-1719.2025.12.8 (In Russian)