The
free-carrier concentration diagnostics of
n-InxGa1-xAs epitaxial
films by Raman Spectroscopy
L.P. Avakyants1, T.P. Kolmakova2
1 Lomonosov Moscow State University, physics faculty, general
physics department
2 JSC "Optron", Moscow, Russia
Received January 24,
2010
Abstract.
Raman scattering has been studied in n-type In0.1Ga0.9As
epitaxial layers with carrier concentrations 1017<n<1019
cm-3.
It is
shown that the behavior of high-frequency modes L+ can be described by the model
of the phonon-plasmon coupled modes in the approximation of Drude. On the basis
of the theory and experimental data the concentration of free carriers
evaluated.
Keywords:
Raman scattering, semiconductor, phonon-plasmon
coupled modes.