"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 2, 2018

contents of issue      DOI  10.30898/1684-1719.2018.2.11       full text in Russian (pdf)   

Recovering the time dependence of the light intensity, the modulation frequency of which is greater than the cut-off frequency of a photodetector based on silicon with deep recombination centers

 

E. V. Nikishin, S. V. Baseyev, V. O. Piksaikina

National Research Mordovia State University, 68 Bolshevistskaya Str., Saransk 430005, Russia

 

The paper is received on January 24, 2018

 

Abstarct. At high light intensity modulation frequencies, the photodetector measures the integral energy of the pulsed radiation. In this case, the photoconductivity kinetics depends mainly on the rate of generation of charge carriers. Mechanisms of recombination of electrons and holes have little effect on the photocurrent. The article defines the conditions under which a photoresistor can be used to reconstruct the time shape of an optical signal. The shape, frequency and intensity of the pulses vary in an arbitrary way. The method of reconstructing the shape of an optical signal is applicable if the intensity varies with frequency ω more than the inverse lifetime of the main charge carriers. That is, the frequency of the modulated optical pulses is higher than the limit frequency of the photodetector. The dependence of the light intensity on time is obtained from the dependence of the current strength on time. Parameters characteristic of a photodetector fabricated on the basis of Si with In, Ag and Au recombination centers are used in the calculations. Theoretical studies of distortions emerging upon the detection of modulated optical signals are performed. A region of frequencies is obtained for which the method of obtaining the dependence of the intensity of the exciting pulses on time is applicable. Increasing the modulation frequency reduces the magnitude of nonlinear, frequency and phase distortion.

Keywords: impulse excitation, mechanisms of recombination, kinetics of photoconductivity, linear distortion, nonlinear distortion, phase distortion, pulse recovery.

References

1.  Mekhitarian V.M., Partamyan H. V. High-speed photodetectors of pulsed radiation based on "inertial" photoresistors and photodiodes. Soviet Physics: Technical Physics, 1982, Vol. 52, No. 9, p.p. 1900 - 1902.

2. Nikishin E. V. On the Applicability Boundaries of the Restoration Method for the Temporal Shape of Modulated Optical Signals with a Frequency Higher than the Boundary Frequency of a Photoresistor. Semiconductors, 2014, Vol. 48, No. 11, pp. 15261529.

3. Nikishin E. V., Grishaev V. Y.  Recovery of time dependence of the intensity of rapidly changing arbitrary shape light pulses. Zhurnal Radioelektroniki - Journal of Radio Electronics, 2017. 9. Available at: http://jre.cplire.ru/jre/sep17/3/text.pdf. (In Russian)

4. A. Milnes, Deep Impurities in Semiconductors. Wiley, New York, 1973, 568 p.

5. Smith R.A., Semiconductors. Cambridge, New York, Cambridge University Press, 1978, 523 p.

6. Goryunov VA, Grishaev V.Ya., Nikishin E.V. On the change in lifetimes of charge carriers under pulsed photoexcitation in silicon with deep impurity centers. University proceedings Volga region. Physics and mathematics sciences2011, No 4, p.p. 118 126. (In Russian)

7. D.V. Lang, H.G. Grimmeiss, E. Meijer, and M. Jaros, Complex nature of gold-related deep levels in siliconPhys. Rev., 1980,  Vol. 22, p.p. 3917 3925.

8. Nikishin E. V., Peskova E. E. Nonlinear distortion arising from the restoration of high-frequency optical excitation. Zhurnal Radioelektroniki - Journal of Radio Electronics, 2015. No 9. Available at: http://jre.cplire. ru/jre/sep15/3/text.pdf (In Russian)

For citation:
E. V. Nikishin, S. V. Baseyev, V. O. Piksaikina. Recovering the time dependence of the light intensity, the modulation frequency of which is greater than the cut-off frequency of a photodetector based on silicon with deep recombination centers. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2018. No. 2. Available at http://jre.cplire.ru/jre/feb18/3/text.pdf
DOI  10.30898/1684-1719.2018.2.11