UDC 621.37/.39:621.59:621.382.32

TEMPLATE MODELING OF A P-CHANNEL MOSFET

V. N. Biryukov

Institute for Radio Engineering Systems and Control of Southern Federal University, Nekrasovsky, 44, Taganrog 347900, Russia

 

The paper is received on February 3, 2019

 

Abstract. A new MOSFET model for liquid-helium temperatures is introduced for needs of analog circuits designers. This model is created by the replacement of certain parameters of the original physical compact model by the quotient of power series of a gate and drain voltages. As the initial models, we chose Shichman-Hodges model and a model of Shockley based on the gradual channel approximation and the degradation of hole mobility in longitudinal electric field. Padé functions are used to simulate the degradation of carrier mobility in a transverse electric field and to correct the current – voltage characteristics in the region of high drain voltages. All parameters of the template model were determined simultaneously by the method of least squares. The total number of parameters of the proposed template model is eight, which makes it possible to use conventional programs for their identification. The relative root-mean-square error of modeling of I–V curves of the template model is reduced by at least three times compared with the same error of the original model.

Keywords: field-effect transistor, MOSFET, modeling, template model, root-mean-square, characterization, liquid-helium temperatures.

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For citation:

V. N. Biryukov. Template modeling of a p-channel MOSFET. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2019. No. 2. Available at http://jre.cplire.ru/jre/feb19/11/text.pdf

DOI  10.30898/1684-1719.2019.2.11