Zhurnal Radioelektroniki - Journal of Radio Electronics. eISSN 1684-1719. 2021. No. 2
ContentsFull text in Russian (pdf)
DOI https://doi.org/10.30898/1684-1719.2021.2.12
UDC 621.375.132
GaN LOW-NOISE X-BAND MMIS AMPLIFIER
E. Kudabay, A. Salikh, V. A. Moseichuk, A. Krivtsun, D. S. Bragin, V. D. Dmitriev
Tomsk State University of Control Systems and Radioelectronics, Lenin str., 40, Tomsk 634045, Russia
The article was received on November 5, 2020, after correction - on February 17, 2021
Abstract. The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company. The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain. The key characteristics of an LNA are noise figure and gain. However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power. As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure. As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA. However, it should be said that LNA was only modeled in the AWR DE.
Keywords: gallium nitride (GaN), HEMT, low-noise amplifier (LNA), Õ-band, MMIC, noise figure (NF).
References
1. Mattamana A., Gouty W., Khalil W., Watson P., Patel V.J. Multi-octave and Frequency-agile LNAs Covering S-C Band using 0.25 μm GaN Technology. IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). 23-26 Oct. 2016.
2. Andrei C., Bengtsson O., Doerner R., Chevtchenko S.A., Heinrich W., Rudolph M. Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive. European Microwave Conference (EuMC). 7-10 Sept. 2015.
3. Schmid U, Reber R., Schuh P., Oppermann M. Robust Wideband LNA Designs. European Microwave Integrated Circuit Conference. 6-7 Oct. 2014.
4. Kobayashi K.W., Campbell C., Lee C., Gallagher J., Shust J., Botelho A. A Reconfigurable S-/X-band GaN Cascode LNA MMIC. IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). 22-25 Oct. 2017
5. Chang W., Jeon G.-Y., Park Y.-R., Lee S., Mn J.-K. X-band Low Noise Amplifier MMIC Using AlGaN/GaN HEMT Technology on SiC Substrate. 2013 Asia-Pacific Microwave Conference Proceedings (APMC-2013). 5-8 Nov. 2013.
6. Vittori M., Colangeli S., Ciccognani W., Salvucci A., Polli G., Limiti E. High performance X-band LNAs using a 0.25 µm GaN technology. 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME). 12-15 June 2017.
7. Zheng P, Zhang S., Xu J., Wang R., Tong X. A 23-31 GHz Robust Low-Noise Amplifier with 1.1 dB Noise Figure and 28 dBm Psat. 49th European Microwave Conference (EuMC). 1-3 Oct. 2019.
8. Kondratenko A.V., Barov A.A., Arykov V.S. GaAs MIS X-Band Low Noise Amplifier. Proceedings of the Conference “Mikroelektronika SVCH” [Microwave Microelectronics]. 2012. Vol.1. P.160-161. (In Russian)
9. Tekshev V.B. Minimizing the change in the noise figure of the amplifier of the scanning receiving active phased array antenna. In: Electronic equipment. Microwave technology. 1994.462 p. (In Russian)
10. Robertson I.D., Lucyszyn S. RFIC and MMIC design and technology. London, IEE. 2001. 582 p.
For citation:
Kudabay E., Salikh A., Moseichuk V.A., Krivtsun A., Bragin D.S., Dmitriev V.D. GaN low-noise X-band MMIC amplifier. Zhurnal Radioelektroniki [Journal of Radio Electronics]. 2021. No.2. https://doi.org/10.30898/1684-1719.2021.2.12 (In Russian)