Zhurnal Radioelektroniki - Journal of Radio Electronics. eISSN 1684-1719. 2021. No. 2

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DOI https://doi.org/10.30898/1684-1719.2021.2.12

UDC 621.375.132




E. Kudabay, A. Salikh, V. A. Moseichuk, A. Krivtsun, D. S. Bragin, V. D. Dmitriev

Tomsk State University of Control Systems and Radioelectronics, Lenin str., 40, Tomsk 634045, Russia


The article was received on November 5, 2020, after correction - on February 17, 2021


Abstract. The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company. The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain. The key characteristics of an LNA are noise figure and gain. However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power. As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure. As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA. However, it should be said that LNA was only modeled in the AWR DE.

Keywords: gallium nitride (GaN), HEMT, low-noise amplifier (LNA), -band, MMIC, noise figure (NF).


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For citation:

Kudabay E., Salikh A., Moseichuk V.A., Krivtsun A., Bragin D.S., Dmitriev V.D. GaN low-noise X-band MMIC amplifier. Zhurnal Radioelektroniki [Journal of Radio Electronics]. 2021. No.2. https://doi.org/10.30898/1684-1719.2021.2.12 (In Russian)