In-situ passivation of thin barrier nitride heterostructures for high electron mobility transistors

 

Alexander Andreev, Maxim Zanaveskin, Ivan Mayboroda, Vasilii Moskvin, Pavel Perminov

National research Center "Kurchatov Institute"

The paper is received on December 25, 2013

Abstract.  In this study Ga-polar heterostructures for high electron mobility transistors based on AlGaN/AlN/GaN and AlN/GaN heterojunctions with total barrier thickness of 11 and 3 nm respectively are obtained using molecular beam epitaxy. Due to in-situ SiN_x surface passivation conducting channel sheet resistance less then 300 Ω/□ is achieved. Temperature dependent diffusion of Si atoms from passivation layer to conducting channel is detected.

Key words: HEMT, GaN, in-situ passivation, silicon diffusion.