Comparative analysis of standard and modulation methods for measuring
thermal resistance of power bipolar transistors
V. I. Smirnov 1,2, V. A. Sergeev 1,2, A. A. Gavrikov 1, A. A. Kulikov 1, A. M. Shorin 2
1 Ulyanovsk branch of Kotelnikov Institute of Radioengineering
and Electronics of Russian Academy of Science, Goncharova 48/2, Ulyanovsk 432071, Russia
2 Ulyanovsk State Technical
University, Severny Venets 32, Ulyanovsk, 432027,
Russia
The paper is received on January 7, 2019
Abstract. The paper describes the results of the thermàl resistance measurements of power bipolar
UHF-trasistor in
active mode using
standard method and method using harmonic modulation of heating power. Heating
power modulation performed by passing heating pulses through the device under
test (DUT) with duration varying harmonically. The modulation
method is implemented in a modernized version of a hardware-software measuring
complex with separate measurement of the voltage on the DUT during of the
pulses of heating current and temperature-sensitive parameter through the
device during the flow of measuring current in the intervals between pulses of
heating current, which allows to measure the thermal resistance of bipolar
transistors in active mode. The measuring complex includes a microntoller
based thermal resistance meter, a personal computer,
and specialized software.
Comparative analysis shows that measurement results by the
standard method (OST 11 0944-96) and modulation method differs less than
5%. Modulation method instead of standard one allows thermal resistance
measuring without prior determination of the «junction-to-case thermal time
constant».
Keywords: thermal resistance, measurement,
modulation method, power bipolar transistor, thermal time constant.
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