"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 1, 2019

contents of issue      DOI  10.30898/1684-1719.2019.1.3     full text in Russian (pdf)  

Comparative analysis of standard and modulation methods for measuring thermal resistance of power bipolar transistors


V. I. Smirnov 1,2, V. A. Sergeev 1,2, A. A. Gavrikov 1, A. A. Kulikov 1, A. M. Shorin 2

1 Ulyanovsk branch of Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Science, Goncharova 48/2, Ulyanovsk 432071, Russia

2 Ulyanovsk State Technical University, Severny Venets 32, Ulyanovsk, 432027, Russia


The paper is received on January 7, 2019


Abstract. The paper describes the results of the thermàl resistance measurements of power bipolar UHF-trasistor in active mode using standard method and method using harmonic modulation of heating power. Heating power modulation performed by passing heating pulses through the device under test (DUT) with duration varying harmonically. The modulation method is implemented in a modernized version of a hardware-software measuring complex with separate measurement of the voltage on the DUT during of the pulses of heating current and temperature-sensitive parameter through the device during the flow of measuring current in the intervals between pulses of heating current, which allows to measure the thermal resistance of bipolar transistors in active mode. The measuring complex includes a microntoller based thermal resistance meter, a personal computer, and specialized software.

Comparative analysis shows that measurement results by the standard method (OST 11 0944-96) and modulation method differs less than 5%. Modulation method instead of standard one allows thermal resistance measuring without prior determination of the «junction-to-case thermal time constant».

Keywords: thermal resistance, measurement, modulation method, power bipolar transistor, thermal time constant.


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 For citation:

V. I. Smirnov, V. A. Sergeev, A. A. Gavrikov, A. A. Kulikov, A. M. Shorin. Comparative analysis of standard and modulation methods for measuring thermal resistance of power bipolar transistors. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2019. No. 1. Available at http://jre.cplire.ru/jre/jan19/3/text.pdf

DOI  10.30898/1684-1719.2019.1.3