Informativeness of the direct branch of the VI characteristic of devices based on the p-n junction

 

A. V. Gradoboev, A. V. Simonova, K. N. Orlova

National Research Tomsk Polytechnic University, 634050, Tomsk Lenin Ave. 30, Russia

 

The paper is received on December 19, 2018

 

Abstract. On the LEDs example the work presents a set of determining methods the p-n junction base resistance and the ohmic contacts resistance by measuring the direct branch of the current-voltage characteristic. The described methods allow you to control the electrophysical characteristics change of the active layers devices based on the p-n-junction and the change in resistance of metal-semiconductor ohmic contacts as a result of various factors (prolonged operating time, various types of ionizing radiation, etc.). The practical implementation of the proposed methods for determining the ohmic contacts resistance and the resistance of the base is quite simple and does not require the expensive equipment use.

Key words: p-n-junction, direct branch of VI characteristic, base resistance, ohmic contacts resistance.

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For citation:

A.V. Gradoboev, A.V. Simonova, K.N. Orlova. Informativeness of the direct branch of the VI characteristic of devices based on the p-n junction. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2019. No. 1. Available at http://jre.cplire.ru/jre/jan19/8/text.pdf

DOI  10.30898/1684-1719.2019.1.8