Accumulation model of the IC damages in electromagnetic fields of
the RF pulses
Yu. A. Pirogov2, A. V. Solodov1
1Moscow Radio Technical Institute of Russian Academy
2Lomonosov Moscow State University, Centre
of Magnetic Tomography and Spectroscopy
Received June 29, 2010
In the present work the
statistical model of defects accumulation under the pulse burst is presented. A
statistical particularity of the IŃ damage in multi-pulse mode is explored.
damage, integrated circuits, RF pulse.