MICROWAVES MULTIPULSE MODE THERMAL FAILURE SIMULATION OF DIODE STRUCTURES

 

S. A. Mesheryakov

State Science Research Experimental Institute of Technical Information Protection Problems

 

 Received April 2, 2013, after correction - July 3, 2013

 

Abstract: Within the limits of numerical model in drift-diffusion thermal approach results of microwaves multipulse mode thermal failure power and temperature characteristics simulation for silicon diode bipolar and Schottky-barrier structures are presents. Determinative function of thermal relaxation in behavior of energy semiconductor structures characteristics by multipulse microwave action thermal failure is demonstrated. Characteristic regions of power characteristic frequency dependences are determinate.

Key words: numerical model, diode structure, microwave pulse, multipulse mode, thermal failure.