MICROWAVES MULTIPULSE MODE
THERMAL FAILURE SIMULATION
OF DIODE STRUCTURES
S. A. Mesheryakov
State Science Research Experimental Institute of Technical Information
April 2, 2013, after correction - July 3, 2013
Within the limits of numerical model in drift-diffusion thermal approach results
of microwaves multipulse mode thermal failure power and temperature
characteristics simulation for silicon diode bipolar and Schottky-barrier structures
are presents. Determinative
function of thermal relaxation in behavior of energy semiconductor structures
characteristics by multipulse microwave action thermal failure is demonstrated.
of power characteristic frequency dependences are determinate.
numerical model, diode structure, microwave pulse, multipulse mode, thermal