Zhurnal Radioelektroniki - Journal of Radio Electronics. eISSN 1684-1719. 2020. No. 7

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DOI  https://doi.org/10.30898/1684-1719.2020.7.11

UDC 621.372.414


 Simulation of a volumetric strip-slot transition


D. S. Klygach, M. G. Vakhitov, N. V. Dudarev, S. N. Darovskikh, S. V. Dudarev

South Ural State University (National Research University), 76 Lenin av., Chelyabinsk 454080, Russia


 The paper was received on July 15, 2020, after correction – on July 22, 2020


Abstract. The possibility of modeling contactless transmission of signal power in a volume-modular diagram-generating scheme of the microwave range is researched. Based on the example of a volumetric strip-slot transition between parts of a volumetric modular diagram-forming device, elements of a scattering matrix are calculated using its electrodynamic model. In order to estimate the accuracy of the proposed model, elements of the ISF transition scattering matrix were calculated in a specialized electromagnetic modeling program. Comparative analysis of elements of scattering matrix calculated using electrodynamic model and using specialized software product showed coincidence of resonance nature of analysed device.

Keywords: diagram forming circuit, volume strip-slot transition, scattering matrix, reflection coefficient, transmission coefficient.


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For citation:

Klygach D.S., Vakhitov M.G., Dudarev N.V., Darovskikh S.N., Dudarev S.V. Simulation of a volumetric strip-slot transition. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2020. No. 7. https://doi.org/10.30898/1684-1719.2020.7.11  (In Russian)