Zhurnal Radioelektroniki - Journal of Radio Electronics. eISSN 1684-1719. 2023. №7

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DOI: https://doi.org/10.30898/1684-1719.2023.7.3


Thermal analysis of wire-free chip integration

for high power microwave application


A.S. Efimov 1, A.V. Grusha 1, R.A. Chibirev 2


1 JSC “RPC “Istok” named after Shokin”
141190, Russia, Fryazino, Vokzalnaya, 2A

2 LLC “Inncocenter VAO”
107564, Russia, Moscow, Krasnobogatyrskaya, 2, b.2


The paper was received April 29, 2023.


Abstract. This paper presents the results of thermal analysis evaluation of two assembly techniques for high power microwave applications: conventional integration on metal carrier using solder preform and flip-chip mounting using Au-Sn system for SLID bonding as an interconnect layer to dielectric substrate. A high power GaN HEMT on SiC substrate with fabrication technology of 0.15 μm and total gate width 1.2 mm are used. The results of the flip-chip approach showed a 7.2% reduction in the overall thermal resistance of the assembly compared to conventional integration approach. Dependences of individual circuit elements on thermal parameters are determinated. Electrical equivalent circuit of thermal models of investigated constructions are obtained.

Key words: MMIC, quasi-MMIC, flip-chip, GaN HEMT, Au-Sn, thermal analysis.

Corresponding author: Efimov Alexander Sergeevich, easmov@gmail.com



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For citation:

Efimov A.S., Grusha A.V., Chibirev R.A. Thermal analysis of wire-free chip integration for high-power microwave application. Zhurnal radioelektroniki [Journal of Radio Electronics] [online]. 2023. №7. https://doi.org/10.30898/1684-1719.2023.7.3