Zhurnal Radioelektroniki - Journal of Radio Electronics. eISSN 1684-1719. 2023. 7
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DOI: https://doi.org/10.30898/1684-1719.2023.7.4

Investigation OF RECOMBINATION emission DISTRIBUTION

OF BIPOLAR AND HETEROBIPOLAR TRANSISTORS

OVER THE AREA OF THE STRUCTURE

 

V.. Sergeev 1. A.A. Kazankov 2, I.V. Frolov 1

 

1 Ulyanovsk Branch of Kotelnikov IRE RAS

432071, Russia, Ulyanovsk, Goncharov st., 48/2

2 Ulyanovsk State Technical University

432027, Russia, Ulyanovsk, Severnyy Venets st., 32

 

The paper was received May 10, 2023.

 

Abstract. A brief overview of methods for diagnosing current distribution and defects of high-power RF and microwave bipolar and heterobipolar transistors by recombination radiation is presented. An experimental setup is described for recording recombination radiation of structures of bipolar semiconductor devices with spatial resolution, which makes it possible to evaluate the inhomogeneity of current distribution in the comb structures of RF and microwave bipolar and heterobipolar transistors. The results of experimental testing of the installation on several samples of bipolar transistors of various types in the diode connection of the emitter junction are presented. It is established that the brightness of recombination radiation and, accordingly, the emitter current density monotonically decreases from the end to the base of the emitter tracks of current-carrying metallization, while the brightness inhomogeneity coefficient, defined as the ratio of the brightness of recombination radiation at the end to the beginning of the emitter tracks monotonically increases with increasing current flowing through the junction. An analytical model is proposed to explain the brightness distribution of recombination radiation along metallization paths in the comb structure of RF and microwave transistors.

Key words: bipolar and heterobipolar RF and microwave transistors, comb structure, recombination radiation, current distribution, heterogeneity.

Financing: The work was carried out with the financial support of the Russian Science Foundation, project 22-29-01134.

Corresponding author: Sergeev Vyacheslav Andreevich, sva@ulstu.ru

 

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For citation:

Sergeev V.A., Kazankov A.A., Frolov I.V. Investigation of recombination emission distribution of bipolar and heterobipolar transistors over the area of the structure. Zhurnal radioelektroniki [Journal of Radio Electronics] [online]. 2023. 6. https://doi.org/10.30898/1684-1719.2023.7.4 (In Russian)