Journal of Radio Electronics. eISSN 1684-1719. 2024. ¹7

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DOI: https://doi.org/10.30898/1684-1719.2024.7.3

 

 

 

PHOTOSENSITIVE CCD SENSORS DESIGNED
ON A SILICON EPITAXIAL STRUCTURE

 

À.Ì. Ìàklakov1,2, Å.V. Kaevitser3,4, D.À. Fedorov1

 

1Scientific & Production Enterprise "Pulsar",
105187, Russia, Moscow, Okrugnoy pr-t, 27

2MIREA – Russian Technological University,
119454, Russia, Moscow, Vernadskogo pr-t, 78

3Kotelnikov Institute of Radioengineering and Electronics of RAS,
141190, Russia, Moscow region, Fryazino, Vvedensky sq. 1

4National University of Science and Technology (MISiS),
119049, Russia, Moscow, Leninsky pr-t, 5

 

The paper was received April 19, 2024

 

Abstract. With the help of instrument-technological modeling, modulation transmission functions for two CCD structures operating in the time delay and accumulation mode were obtained.

Key words: resolution, CCD-matrix, TCAD modeling, matrix photodetector.

Corresponding author: Kaevitser Ekaterina Vladilenovna, katrin125@mail.ru

References

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For citation:

Ìàklakov À.Ì., Kaevitser Å.V., Fedorov D.À. Photosensitive CCD sensors designed on a silicon epitaxial structure. //Journal of Radio Electronics. – 2024. – ¹.7. https://doi.org/10.30898/1684-1719.2024.7.3  (In Russian)