Influence of mechanical stress in semiconductor heterostructure on density of p-n-junctions
E. L. Pankratov
Nizhny Novgorod State University of Architecture and Civil Engineering
Received May 31, 2011
Abstract. It has been recently shown, that inhomogeneity of
semiconductor heterostructure and optimization of annealing time leads to decrease
depth of p-n-junctions and to increase homogeneity of dopant
distribution in doped area. It has been also recently shown, that mechanical
stress in two layer heterostructure (substrate and epitaxial layer) changes dopant
distribution in heterostructure in directions, which are perpendicular to
interface between layers of heterostructure, in comparison with unstressed
sample. In this paper we consider an alternative approach to increase density
of p-n-junctions in the same heterostructure by using overlayer.
The overlayer leads to additional mechanical stress and as being due to
increasing of density of p-n-junctions in the heterostructure.
Keywords: increasing of sharpness of p-n-junctions;
increasing of density of p-n-junctions; optimization of
annealing; influence of stress between layers in heterostructure.