"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 6, 2017

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Mathematics model of powerful amplifying cascade on a bipolar transistor


S. V. Savel’ev

Kotel'nikov Institute of Radio-engineering and Electronics of RAS, Fruazino Branch, Vvedensky Sq.1, Fryazino Moscow region 141120, Russia


The paper is received on June 6, 2017


Abstract. A mathematics model of a single-transistor amplifier cascade based on a powerful bipolar microwave transistor is proposed. The change in generation regimes in high-power transistor microwave devices with varying internal and external parameters of circuits, such as matching elements of transistors or values of supply voltages, usually does not lend itself to theoretical research because of the almost insurmountable difficulties connected in these cases with the need to solve partial differential equations with Boundary conditions, determined only at the ends of semiconductor structures. With strong currents, the impedances and the gain of the transistor are inversely proportional to the value of the working current of the transistor, which together with the spread of parameters of high-power transistors making up to 35%, makes it unpromising to create an accurate static model of a powerful bipolar transistor. Therefore, for the simulation of high-power transistor devices, the problem of developing and creating a dynamic model of a powerful amplifier stage is of interest. This mathematical model is investigated using the main parameters of a powerful domestic transistor 2T982A-2.  The correspondence between the values of the model parameters and the parameters of the real device is established. The dynamics of the model in an autooscillatory mode is numerically studied with the purpose of revealing the regularities of occurrence and development of regular and chaotic oscillations. The results of experimental studies of the regenerative amplification stage in the case of self-excitation in the microwave range as applied to the theoretical model are considered.

Key words: mathematics model, powerful bipolar transistor, auto-oscillations, chaos.


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For citation:

S. V. Savel'ev. Mathematics model of powerful amplifying cascade on a bipolar transistor. Zhurnal Radioelektroniki - Journal of Radio Electronics, 2017, No. 6. Available at http://jre.cplire.ru/jre/jun17/10/text.pdf. (In Russian)