Abstract.
A mathematics model of a
single-transistor amplifier cascade based on a powerful bipolar microwave
transistor is proposed. The change in generation regimes in high-power transistor
microwave devices with varying internal and external parameters of circuits,
such as matching elements of transistors or values of supply voltages, usually
does not lend itself to theoretical research because of the almost
insurmountable difficulties connected in these cases with the need to solve
partial differential equations with Boundary conditions, determined only at the
ends of semiconductor structures. With strong currents, the impedances and the
gain of the transistor are inversely proportional to the value of the working
current of the transistor, which together with the spread of parameters of
high-power transistors making up to 35%, makes it unpromising to create an
accurate static model of a powerful bipolar transistor. Therefore, for the
simulation of high-power transistor devices, the problem of developing and
creating a dynamic model of a powerful amplifier stage is of interest. This mathematical
model is investigated using the main parameters of a powerful domestic
transistor 2T982A-2.
The correspondence between the values of the model
parameters and the parameters of the real device is established. The dynamics
of the model in an autooscillatory mode is numerically studied with the purpose
of revealing the regularities of occurrence and development of regular and
chaotic oscillations. The results of experimental studies of the regenerative
amplification stage in the case of self-excitation in the microwave range as
applied to the theoretical model are considered.
Key words: mathematics model, powerful bipolar transistor,
auto-oscillations, chaos.
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