"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 6, 2018

contents of issue      DOI  10.30898/1684-1719.2018.6.11     full text in Russian (pdf)  

Multilayer deposition of pure and fluorine-doped silica glass on silicon wafers in a plasma of resonance local microwave loss-pressure discharge


L. M. Blinov 1, A. P. Gerasimenko 3, Yu. V. Gulyaev 1, A. P. Dolgov 3, L. Yu. Kochmarev 2, V. A. Cherepenin 1, I. P. Shilov 2


1 Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, Mokhovaya 11-7, Moscow 125009, Russia 

2 Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, Vvedensky Sq.1, Fryazino Moscow region 141190, Russia 

3 JSC Academician A. L. Mints Radiotechnical Institute, RTI Group,  8 Marta str., 10-1, Moscow 127083, Russia


The paper is received on June 8, 2018


Abstract. An effective method of multilayer, gas – phase deposition of pure and fluorine doped silica glass to the silicon wafers for realization of planar waveguides and other waveguide elements optical structures, is presented. This method is based on using of microwave discharge low pressure plasma (Plasma Chemical Vapour Deposition – PCVD). The paper shows that a non-isothermal plasma of resonance local low pressure microwave discharge is an effective instrument for a forming of  thin pure and also fluorine doped silica glass layers. Cracks in layers, doped by fluorine do not observed, even for significant layer thickness (20 – 50 μm).  The controlled, smooth reduction of a doped layers refraction index to 1, 40 – 1, 43, can be very useful for extension of a work area of waveguides developed. Using of PCVD allows to achieve a significantly better stoichiometry of deposited SiO2 glass layers, than using of other known methods, including the standard for silicon integral technology, PECVD method. High deposition rates achieved are reported in this paper (more, than 1 μm / min). This can significantly increase the actual efficiency of the SiO2 deposition technology. Additionally, the level of optical losses in layers described here, much less, then in standard technologies, due to high transparency and uniformity of glass material, deposited in PCVD method. For deposition of planar waveguide structures on silicon wafers of great diameters (more, then 100 mm), it is necessary to develop a new design of microwave resonance plasmatron, allowing accommodation to great wafers and uniform distribution of microwave electrical field along this great diameters.

Key words: planar optical waveguides; Si-integrated planar waveguides, based on pure and doped silica layers; plasma chemical vapour deposition; resonance microwave plasmatron; microwave discharge.


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For citation:

L. M. Blinov, A. P. Gerasimenko, Yu. V. Gulyaev, A. P. Dolgov, L. Yu. Kochmarev, V. A. Cherepenin, I. P. Shilov. Multilayer deposition of pure and fluorine-doped silica glass on silicon wafers in a plasma of resonance local microwave loss-pressure discharge. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2018. No. 6. Available at http://jre.cplire.ru/jre/jun18/11/text.pdf

DOI  10.30898/1684-1719.2018.6.11