Influence of variability of diffusion coefficient and limit of solubility of a dopant in a multilayer structure on the dopant distribution during forming diffused p-n-junction. Optimization of annealing time.
E.L.
Pankratov Received February 21, 2007
Analysis of dopant dynamics redistribution in a multilayer semiconductor structure with account temporal and concentrational dependence of diffusion coefficient and limit of solubility has been done by development of recently elaborated an approach for analysis of mass and heat transport (see, for example, [1,2]). It has been illustrated, that proper choosing of spatial distribution of properties of multilayer structure gives us possibility to increase sharpness of diffused p-n-junction and uniformity of dopant distribution of doped area. Several conditions for together increasing of sharpness of p-n-junction and uniformity of dopant distribution of doped area, which were determined in [2], have been generalized. The approach for optimization of annealing time for both aims has been considered.
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