Optimization of manufacturing of field-effect transistors constituent DRAM elements in order to increase their density

 

E. L. Pankratov^1,2, E. A. Bulaeva¹

¹ Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod 603950, Russia

² Volgo-Vyatka Branch Moscow Technical University of Communication and Informatics (MTUSI), 15 Mendeleev str, Nizhny Novgorod 603011, Russia

 

The paper is received on January 25, 2017

 

Abstract. In this paper we consider an approach to increase density of field-effect transistors framework elements of DRAM and at the same time to decrease their dimensions. In the framework of this approach it is necessary to dope required areas of heterostructure with specific configuration by diffusion or ion implantation and to optimize annealing of dopant and/or radiation defects (after ion implantation). Analysis of redistribution of dopant with account of redistribution of radiation defects for optimization of annealing of dopant and /or radiation defects has been done by using recently introduced analytical approach. The approach gives a possibility to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces between layers of the heterostructure with account to nonlinearity of these transports and variation in time of their parameters.

Keywords: field-effect heterotransistors, DRAM elements, optimization of manufacturing, increasing of density of heterotransistors.

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For citation:

E. L. Pankratov, E. A. Bulaeva. Optimization of manufacturing of field-effect transistors constituent DRAM elements in order to increase their density. Zhurnal Radioelektroniki - Journal of Radio Electronics, 2017, No. 3. Available at http://jre.cplire.ru/jre/mar17/3/text.pdf. (In Russian)