Thermoelectric processes in heterojunction LED under the influence of powerful microwave electromagnetic radiation

 

A. M. Hodakov, V. A. Sergeev, A. A. Gavrikov

Kotel’nikov Institute of Radio-Engineering and Electronics of RAS, Ulyanovsk Branch, Goncharova 48/2, Ulyanovsk 432071, Russia

 

The paper is received on March 22, 2017

 

Abstract. One of the possible causes of failures of heterojunction light-emitting diodes under the influence of powerful microwave electromagnetic radiation are thermal processes that occur in a LED’s heterojunction structure. A mathematical thermoelectric model of thermal damage of a heterojunction LED was developed in order to investigate the dependence of catastrophic failure of heterojunction LEDs with maximum power of microwave radiation pulse P_k on its length τ_k. The mathematical description of the model is the joint solution of time-dependent equations of electric and heat conductivity with temperature-dependent thermo-physical and electrical characteristics of the elements of the device structure and bulk density of thermal power. Three LED heating phases corresponding to sequential regimes of work and different external conditions were considered: the LED structure heat in the operation mode until the temperature reaches a steady value; thermal heating of the structure by means of incoming operating electric power of the device and power of electromagnetic radiation; and then melting of its structure. Calculation studies were carried out for AlGaAs/GaAs and InGaN/GaN structures of high-power LEDs on 6H-SiC and Si substrates. Resulting graph calculated from the represented model contains a part of adiabatic heating with heating pulses lengths much less than characteristic time of heat diffusion in the semiconductor structure of the LED and a part of gradual output to the quasistatic heating mode with a minimum striking power. The obtained results were compared with results calculated using the generic Wunsch-Bell model.

Key words: impulse of microwave radiation; thermal damage; thermal damage power, temperature.

References

1. Alexeev V.F., Juravlev V.I. Thermal models of failures of semiconductor structures under the influence of powerful electromagnetic pulses. Doklady BGUIR-Reports of BSUIR 2005. No. 2. pp. 65-72. (In Russian)

2. Wunsh D.C., Bell R.R. Determination of threshold failure levels of semiconductor diodes and transistors due to pulse voltage. IEEE Transaction on Nuclear Science. 1968. Vol. NS-15. No. 6. P. 244-259.

3. Dwyer V.M., Franklin A.J., Campbell D.S. Thermal failure in semiconductor devices. Solid-State Electronics. 1990. Vol.33. No. 5. P. 553-560.

4. Dobykin V.D. Development of the theory of thermal damage of semiconductor structures by powerful electromagnetic radiation. Journal of Communications Technology and Electronics, 2008, Vol. 53. No. 1, P. 100-103. DOI: 10.1134/S1064226908010129

5. Kravchenko V.I., Serkov. A.A., Breslavets V.S., e.t.c. Modeling of physical mechanisms of occurrence of irreversible failures of semiconductor devices in conditions of electromagnetic influence. Vestnik NTU "KhPI" - Bulletin of NTU "KhPI" [Vestnik NTU "KhPI" ], 2015, No. 51. P. 56- 59. (In Russian)

6. Hiroyuki Shibata, Yoshio Waseda, Hiromichi Ohta at.al. High thermal conductivity of gallium nitride (GaN) crystals grows by HVPE process. Materials Transactions. 2007. V.48. N10. P. 2782-2786.

7. NSM Archive Physical Properties of Semiconductors. Available at: http://www.ioffe.ru/SVA/NSM/.

8. Sergeev V.A., Hodakov A.M. Thermoelectric models of powerful bipolar semiconductor devices. Part II. Nonlinear heat-electric model of high-power light-emitting diodes. Journal of Communications Technology and Electronics, 2015, Vol. 60, No.12, pp. 1328-1332. DOI: 10.1134/S1064226915080161

9. Sergeev V.A., Hodakov A.M. Nelineynye teplovye modeli poluprovodnikovyh ustristv [Nonlinear thermal models of semiconductor devices] Ulyanovsk: UlSTU pulbl, 2012, (In Russian).

10. Bin Du, Hudgins J.L. Santi E. at al. Transient Electrothermal Simulation of Power Semiconductor Devices. IEEE Transactions on power electronics. 2010. V. 25. N1. P. 237-248.

11. T.K. Gachovska, B. Du, J.L. Hudgins, E. Santi. Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices. Morgan & Claypool: San Rafael, 2013.

 12. Shan O., Dai Q., Chhajed S. Analysis of thermal properties of GaInN light-emitting diodes and laser diodes. Journal of applied physics. 2010. N108. P. 30-38.

13. Lee, S. Spreading Resistance Model for Electronic packaging / S. Lee, S. Song ,V. Au. Proceedings of ASME/JSME Thermal Engineering Conference. 1995. V. 4. P. 199

14. Light-Emitting Diodes. E. Fred Schubert, Cambridge University Press, 2006.

15. Sergeev V.A., Hodakov A.M., Molgatchev A.A. Modeling the thermal damage of a microwave diode with a powerful pulse of electromagnetic radiation. Izvestija vusov. Electronica - Proceedings of universities. Electronics. 2016. Vol. 21. No.3. P. 289–292. (In Russian)

16. Sergeev V.A., Hodakov A.M Modeling of non-stationary thermoelectric processes in the structure of a high-power LED. Izvestija vusov. Electronica - Proceedings of universities. Electronics. 2011. ¹6. Ñòð. 80–82. (In Russian)

17. Johnston, A. H. Proton Degradation of Light-Emitting Diodes / A. H. Johnston, B. G. Rax, L. E. Selva and C. E. Barnes. IEEE Transactions on Nuclear Science. 1999. V. 46. P. 1781.

18. Arlight LEDs. Available at: http://www.arlight.ru/catalog/svetodiody-100001/ .

19. Shun-Lien Chuang, Akira Ishibashi, Satoru Kijima et al. Kinetic model for degradation of light-emitting diode. IEEE Journal of Quantum Electronics. 1997 V. 33. N6. P.970-979 .

20. Taska D.M. Pulse power failure modes in semiconductors. IEEE Transaction on Nuclear Science. 1970. V. NS-17. N 7. P. 364-372.

 

For citation:

A.M. Hodakov, V.A. Sergeev, A. A. Gavrikov.Thermoelectric processes in heterojunction LED under the influence of powerful microwave electromagnetic radiation. Zhurnal Radioelektroniki - Journal of Radio Electronics, 2017, No. 3. Available at http://jre.cplire.ru/jre/mar17/6/text.pdf. (In Russian)