Redistribution of a dopant, which implanted in a multilayer structure, due to pulse laser annealing of radiative defects

E.L. Pankratov

Institute for Physics of Microstructures of Russian Academy of Sciences, Nizhny Novgorod, Russia
 

Received April 26, 2006

 

In this paper the analysis of dynamics of redistribution of dopant, which was implanted into a multilayer structure, due to laser pulse with account temperature dependence of diffusion coefficient, has been done. It has been shown, that inhomogeneity of the solid state structure gives us possibility to increase the sharpness of an implanted-junction rectifier, which was produced by implantation, and homogeneity of dopant distribution in doped area. Several conditions on spatial distribution of properties of doped by implantation multilayer structure, which correspond to implanted-junction rectifier with higher sharpness and higher homogeneity of dopant distribution in doped area in comparison with homogeneous structure, have been determined.