Application of radiation processing of materials to increase sharpness of a
p-n-junction in a semiconductor heterostructure
Nizhny Novgorod State University of Architecture and Civil Engineering
Received May 13, 2011
Abstract. Recently it has been elaborated an approach to decrease depth
of diffusive- and implanted-junction rectifiers by manufacturing the rectifiers
in a semiconductor heterostructure and optimization of annealing of dopant and
radiation defects. At the same time with decreasing of depth of p-n-junction
homogeneity of dopant distribution in doped area increases. In this paper we analyzed
possibility to increase the both effects at one time by radiation processing of
materials of the heterostructure.
Keywords: increasing of sharpness of
a p-n-junctions; radiation processing of materials.