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Application of radiation processing of materials to increase sharpness of a p-n-junction in a semiconductor heterostructure

E. L. Pankratov

Nizhny Novgorod State University of Architecture and Civil Engineering

Received May 13, 2011


Abstract. Recently it has been elaborated an approach to decrease depth of diffusive- and implanted-junction rectifiers by manufacturing the rectifiers in a semiconductor heterostructure and optimization of annealing of dopant and radiation defects. At the same time with decreasing of depth of p-n-junction homogeneity of dopant distribution in doped area increases. In this paper we analyzed possibility to increase the both effects at one time by radiation processing of materials of the heterostructure.

Keywords: increasing of sharpness of a p-n-junctions; radiation processing of materials.