Simulation of physical processes in semiconductor structures under the influence of the powerful microwave pulse. Shottky-barrier structures
S. A. Mesheryakov
State Science Research Experimental Institute of Technical Information
The paper is received
on November 12, 2013
Results of simulation of the physical processes in silicon Schottky-barrier
structures at microwave pulse action of electromagnetic radiation are given
within the limits of numerical model in drift-diffusion thermodynamic approach.
Power and temperature characteristics of structures in durations wide range of
the single pulse action depending on their constructive-technological
parameters are presented.
numerical model, diffusion, drift, Schottky-barrier structure, microwave pulse,