Simulation of physical processes in semiconductor structures under the influence of the powerful microwave pulse. Shottky-barrier structures

 

S. A. Mesheryakov 

State Science Research Experimental Institute of Technical Information Protection Problems

The paper is received on November 12, 2013

Abstract. Results of simulation of the physical processes in silicon Schottky-barrier structures at microwave pulse action of electromagnetic radiation are given within the limits of numerical model in drift-diffusion thermodynamic approach. Power and temperature characteristics of structures in durations wide range of the single pulse action depending on their constructive-technological parameters are presented.

Key words: numerical model, diffusion, drift, Schottky-barrier structure, microwave pulse, thermal damage.