Journal of Radio Electronics. eISSN 1684-1719. 2025. ¹11
Full text in Russian (pdf)
DOI: https://doi.org/10.30898/1684-1719.2025.11.2
Mechanical Stress Analysis of Structural Layers
in a Microelectronic BAW Resonator
at Different Deposition Temperatures
N.A. Chirikov1,2, T.N. Ulaeva1,2, A.N. Kuznetsov1,2, N.M. Zhilin1,2
1Omsk Scientific Center SB RAS (Institute of Radiophysics and Physical Electronics),
644024, Russia, Omsk, Marksa Ave., 152Omsk Research Institute of Instrument Engineering,
644071, Russia, Omsk, Maslennikova St., 231
The paper was received October 6, 2025.
Abstract. Thin films of molybdenum, aluminum, silicon dioxide, and aluminum nitride were deposited by magnetron sputtering for use as the constituent layers of a bulk acoustic wave (BAW) microelectronic resonator. The effect of substrate temperature during sputtering on the mechanical stress in the films was determined. Optimal sputtering conditions were identified that minimize intrinsic stress across the films. Based on these conditions, prototype microelectronic resonators were fabricated, operating at 3.9 GHz with a quality factor of 573.
Key words: BAW resonator; Bragg reflector; temperature dependence; mechanical stress; thin films.
Financing: The work was carried out with financial support from the Russian Science Foundation and the governments of the Omsk region within the framework of the Russian Science Foundation grant No. 23-12-20010.
Corresponding author: Ulaeva Tatiana Nikolaevna, tanskaya-89@mail.ru
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For citation:
Chirikov N.A., Ulaeva T.N., Kuznetzov A.N., Zhilin N.M. Mechanical stress analysis of structural layers in a microelectronic BAW resonator at different deposition temperatures. // Journal of Radio Electronics. – 2025. – ¹. 11. https://doi.org/10.30898/1684-1719.2025.11.2 (In Russian)