c1.gif (954 bytes) " "  N 10, 2003

c2.gif (954 bytes)

 

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; e-mail: mamedov_az50@mail.ru

 

 

 

08 2003 .

 

    , .

 

 

 

 

, , . - , [1,2] . , , , . [3,4] 1 R1 2 R2 . R. [2], R 1, R1 2, R2

, (1)

. (2)

, R1 R2 , R1. Simmons [3,4]. (1), (2) .

, .

. (1)

,  (3)

,                (4)

. (5)

w<w, w

.  (6)

w/w , w/w>1. w/w , w/w=2-3 (3) .

. (7)

(4), (5) (7) w>w,

. (8)

(6) (8) , w<w w>w .

w<w<w

. (9)

, (9) , . 2 4 .

, , , (6), (8), (9) lgC-lgw , . .1 (1) (2) , , lgC-lgw 1=1700 , 2=150 . , . 50 %. [4-6].

 

 

. (1)

,      (10)

,   (11)

.   (12)

G2

.            (13)

G2< G2, G2

.           (14)

G2>G2,G2

.         (15)

, G2<G2<G2

.          (16)

(14)-(16) , G2 lgC-lgG2(T) , .

(13)

.      (17)

(17) (16),

.        (18)

(18) , , lgC-1/T <T<T 0,868×t/k. G2 G2. (11) (12),

,       (19)

.                                            (20)

.1 (1) (2) , , lgC-1/T (14), (15) (18) 1=1700 , 2=150 f=1. , . 50 %. [4-6].

. , w/w>1 (2)

, (21)

w/w<1

, (22)

.. , R(w), (21), (22) , .

(2)

, (23)

.                                  (24)

(23), (24) , , R(), lgR-1/T, >T , <T - 0,434×Et/k.

.2 (1), (2) () (), lgR(w)-lgw lgR-1/, (2), (21)-(24) 1=1700 , 2=150 .

 

 

, , t=R×C. , , t(w) t() (w), R(w) (), R(). . .3 (1) (2) () (). , , .

 

 

 

 

1. ., 堠 .-. : . . ., ., , 1988, 344.

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3.Simmons J.G. Alternating current electrical properties of highly doped insulating films. Journal of Applied Physics, 1970, v.41, N2, p.538-544.

4.Simmons J.G., Wei L.S. Theory of transient emisson current in MOS devices and the direct determination of interface trap parameters. Solid State Electronics, 1974, v.17, p.117-124.

5.Barkhalov B.Sh., Y.A. Vidadi. Properties of Al /copper phthalocyanine/ Ag diode structures with Schottky barriers. Thin solid films, 1977, v.40, N2, p.15-18

6.Fernandez-Canque H.L., Allison J., Thompson M.J. The capacitance of rf sputtered hydrogenated amorphous silicon, Schottky barrier diodes. Journal of Applied Physics, 1983, v.54, N12, p.7025-7033.