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Modulation of characteristics of picosecond stimulated emission of GaAs, recommendations about its use and suppression. Visualization of the hole, "burnt" by emission, in the region of amplification of light absorption spectrum

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov

Kotel'nikov Institute of Radio-engineering and Electronics of RAS, Moscow

Received September
26, 2012

Abstract: Self-modulation of characteristics of intrinsic picosecond stimulated emission, arising during photogeneration of electron-hole plasma (EHP) in GaAs, is phenomenologically explained. Modulation allows us to consider the emission, moving in the active medium in directions to and from the sample end face, as two components of a self-oscillating system, with properties characteristic for the system of coupled oscillators. This is a new argument that photogenerated EHP, longitudinal optical phonon and intrinsic emission interact self-consistently and form a self-oscillating system. Recommendations for use or elimination of the considered emission modulation by design of powerful semiconductor lasers are given. Self-modulation of the absorption spectrum, as another product of self-oscillating system, gives an idea on formation and evolution of a virtual hole, "burnt" by emission, in the region of amplification spectrum.

Keywords: Self-modulation, stimulated emission, picosecond, optical phonon, semiconductor laser, absorption spectrum.