"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 10, 2019

contents of issue      DOI  10.30898/1684-1719.2019.10.4     full text in Russian (pdf)  

UDC 621.382

Doping profiles of AlGaAs/InGaAs/GaAs pHEMT-structures


P. A. Zmanovsky 1, N. D. Il’yushina 2, M. M. Abdulov 1,

A. K. Smirnova 1,2, M. N. Drozdov 3, A. A. Vedeneev 1,2, M. P. Dukhnovsky 1

1 JSC “RPC “Istok” named after Shokin”, Vokzalnaya 2A, Fryazino 141190, Russia

2 Branch of RTU MIREA in Fryazino, Vokzalnaya 2A, Fryazino 141190, Russia

3 Institute for Physics of Microstructures Russian Academy of Sciences, Academicheskaya 7, Nizhny Novgorod 603087, Russia


The paper is received on June 10, 2019, after correction - on October 7, 2019

Abstract. In the present paper by means of secondary ion mass-spectrometry we study Si atoms distribution in MOCVD AlGaAs/InGaAs/GaAs pHEMT-structures with the background doping. The C-V measurements of such structures and Auger electron spectroscopy study of SiH4 interaction with GaAs(001) are also presented below.

Key words: secondary ion mass-spectrometry, epitaxy, pHEMT-structure.


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2. Protasov D.Yu., Zhuravlev K.S. The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors. Solid-State Electronics, 2017, Vol. 129, pp. 66-72.

3. Takeda J., Isono R., Fujio S., Kamogawa H., Sahara M., Meguro T., Otoki Y. Degradation of pHEMT performance in BiHEMTs caused by thermal history during HBT growth and suggestions for improvement. CS MANTECH Conference, Portland, Oregon, USA, May 17th – 20th, 2010, pp. 281-284.


For citation:

P.A.Zmanovsky, N.D.Il’yushina, M.M.Abdulov, A.K.Smirnova, M.N.Drozdov, A.A.Vedeneev, M.P.Dukhnovsky. Doping profiles of AlGaAs/InGaAs/GaAs pHEMT-structures.  Zhurnal Radioelektroniki - Journal of Radio Electronics. 2019. No. 10. Available at http://jre.cplire.ru/jre/oct19/4/text.pdf

DOI  10.30898/1684-1719.2019.10.4