UDC 621.382
Doping
profiles of AlGaAs/InGaAs/GaAs pHEMT-structures
P. A. Zmanovsky 1,
N. D. Il’yushina 2, M. M. Abdulov 1,
A. K. Smirnova 1,2, M. N.
Drozdov 3, A. A. Vedeneev 1,2, M. P. Dukhnovsky 1
1
JSC “RPC “Istok” named after Shokin”, Vokzalnaya 2A, Fryazino 141190, Russia
2
Branch of RTU MIREA in Fryazino, Vokzalnaya 2A, Fryazino 141190, Russia
3
Institute for Physics of Microstructures Russian Academy of Sciences,
Academicheskaya 7, Nizhny Novgorod 603087, Russia
The paper is received on June 10, 2019, after correction - on October
7, 2019
Abstract. In
the present paper by means of secondary ion mass-spectrometry we study Si atoms
distribution in MOCVD AlGaAs/InGaAs/GaAs pHEMT-structures with the background
doping. The C-V measurements of such structures and Auger electron spectroscopy
study of SiH4 interaction with GaAs(001) are also presented below.
Key words:
secondary ion mass-spectrometry, epitaxy, pHEMT-structure.
References
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2.
Protasov D.Yu., Zhuravlev K.S. The influence of impurity profiles on mobility
of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures
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3.
Takeda J., Isono R., Fujio S., Kamogawa H., Sahara M., Meguro T., Otoki Y. Degradation
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For citation:
P.A.Zmanovsky, N.D.Il’yushina,
M.M.Abdulov, A.K.Smirnova, M.N.Drozdov, A.A.Vedeneev, M.P.Dukhnovsky. Doping profiles of
AlGaAs/InGaAs/GaAs pHEMT-structures. Zhurnal
Radioelektroniki - Journal of Radio Electronics. 2019. No. 10. Available
at http://jre.cplire.ru/jre/oct19/4/text.pdf
DOI 10.30898/1684-1719.2019.10.4