UDC 621.382
On
the relationship between the local electroluminescence parameters of green InGaN LEDs
and the parameters of the I-V characteristics and low-frequency
noise in the currents range corresponding to the appearance of luminescence
I. V. Frolov 1,2, O.
A.
Radaev 1,2, A.
A.
Gavrikov 1, V. A.
Sergeev 1,2
1 Ulyanovsk
Branch of Kotelnikov Institute of Radioengineering and Electronics
of Russian Academy of
Sciences,vGoncharov st. 48/2,
Ulyanovsk 432071, Russia
2 Ulyanovsk
State Technical University,vSevernyy
Venets 32, Ulyanovsk 432027, Russia
The paper is received on October
7, 2019
Abstract. A model of the relationship between the steepness K
of the P-I characteristic of the LED measured in the microcurrent
range and the defects concentration in the heterostructure of the LED is
presented. According to the model, the higher the current causing the luminescence,
the more defective is the structure. The P-I characteristic of
such LEDs has a large steepness. An experimental verification of the
correlation between the average value and the heterogeneity degree of the K parameter
distribution over the chip area with the defectness degree of the
heterostructure using commercial InGaN green LEDs was carried out. The degree
of the heterostructure defectness was estimated indirectly by the low-frequency
noise level SI and the non-ideality coefficient of the I-V
characteristic m. The distribution profile of the steepness of the P-I
characteristics over the LED chip was determined as the ratio of the intensities
of the chip images at currents of 500 nA and 5 μA obtained by a Levenhuk D320L
digital microscope camera. The inhomogeneity of the steepness distribution of
the P-I characteristic was estimated based on the mean square
deviation σ normalized to the average value of the parameter Kav
over the chip. We determined a strong correlation between the parameters Kav
− SI
and Kav − m (the
correlation coefficient ρ is 0.93 and 0.89, respectively) and a weak
correlation between the parameters σ/ Kav − m (ρ = 0.42). The results can be
used for identification local areas of LED chip with increased defectness.
Key words:
InGaN-based LED, electroluminescence, P-I characteristic, steepness of the characteristic,
I-V characteristics, low-frequency noise, correlation.
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For citation:
I. V. Frolov, O. A.. Radaev,
A. A. Gavrikov,
V. A. Sergeev.
On the relationship between the local
electroluminescence parameters of green InGaN LEDs and the parameters of the I-V
characteristics and low-frequency noise in the currents range corresponding to
the appearance of luminescence. Zhurnal Radioelektroniki - Journal
of Radio Electronics. 2019. No. 10. Available
at http://jre.cplire.ru/jre/oct19/5/text.pdf
DOI 10.30898/1684-1719.2019.10.5