Zhurnal Radioelektroniki - Journal of Radio Electronics. eISSN 1684-1719. 2021. №10
ContentsFull text in Russian (pdf)
DOI: https://doi.org/10.30898/1684-1719.2021.10.5
UDC: 621.315.592
EFFECTS OF GAMMA RADIATION ON THE LAYERED STRUCTURE
OF LITHIUM SILICON – NIOBATE
O. V. Gafurov, R. B. Khamrokulov, U. R. Naimov
Tajik National University «TNU»
Dushanbe, Rudaki Avenue 17
The paper was received July 5, 2021
Abstract. In this work, it is shown that when an ionizing radiation pulse acts on surfactant-type devices in which a silicon single crystal is deposited with a gap on a piezoelectric substrate made of lithium niobate, the output signal is distorted. It was found that, depending on the type of conductivity of the material deposited on the lithium niobate, a different character of recovery of the device parameters was observed. The effect of ionizing radiation on air-gap devices operating as a memory correlator showed that the previously recorded signals were erased at a dose rate of ≥ 106 rad. To explain these dependencies, a model is used based on the fact that photo carriers excited by ionizing radiation in the depleted layer are captured by traps at the silicon-air interface for devices with an air gap and at the silicon-silicon oxide interface for monolithic structures The presented model, which takes into account traps not at the interface, explains most of the effects that cause a change in the output high frequency (RF) signal.
Key words: structure, crystal lattice, gamma radiation, dose, surfactant devices, lithium niobate, single-crystal silicon.
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For citation:
Gafurov O.V., Khamrokulov R.B., Naimov U.R. Effects of gamma radiation on the layered structure of lithium silicon – niobate. Zhurnal Radioelektroniki [Journal of Radio Electronics] [online]. 2021. №10. https://doi.org/10.30898/1684-1719.2021.10.5 (In Russian)