Journal of Radio Electronics. eISSN 1684-1719. 2024. №10
Full text in Russian (pdf)
DOI: https://doi.org/10.30898/1684-1719.2024.10.8
STUDY OF PIEZOELECTRIC PROPERTIES
OF ALUMINUM NITRIDE FILMS
FORMED ON ALUMINUM AND MOLYBDENUM LAYERS
FOR CREATION OF MICROELECTRONIC FBAR
А.Yu. Kuklev 1, 2, 3, V.I. Strunin 1, 3, L.V. Baranova 1, 3, N.A. Davletkildeev 1, 3, N.A. Chirikov1, 2
1Omsk Scientific Center SB RAS (Institute of Radiophysics and Physical Electronics)
644024, Omsk, pr. Karla Marksa, 15
2 Omsk Scientific-Research Institute of Instrument Engineering
644071, Omsk, Maslennikova, 231
3 Dostoevsky Omsk State University
644077, Omsk, pr. Mira, 55-A
The paper was received October 22, 2024.
Abstract. The paper presents the results of AFM measurements of piezomodulus d33 in aluminum nitride films obtained by vacuum magnetron sputtering in a reactive gas atmosphere of argon and nitrogen. Dependences of piezomodule d33 on technological parameters are presented of sputtering AlN films, such as substrate temperature, magnetron discharge power, and the Ar/N2 ratio. Based on the analysis of the obtained data, the optimal technological modes of formation of aluminum nitride films have been determined aluminum nitride films for the formation of the piezoelectric layer of the FBAR.
Key words: magnetron sputtering, aluminum nitride, FBAB, piezomodule d33, thin films.
Financing: The research was realized with the support of the grant of the Russian Science Foundation (project No. 23-12-20010).
Corresponding author: Kuklev Alexander Yurievich, alexanderkuklev@mail.ru
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For citation:
Kuklev А.Yu., Strunin V.I., Baranova L.V., Davletkildeev N.A., Chirikov N.A. Study of piezoelectric properties of aluminum nitride films formed on aluminum and molybdenum layers for creation of microelectronic FBAR // Journal of Radio Electronics. – 2024. – №. 10. https://doi.org/10.30898/1684-1719.2024.10.8 (In Russian)