THE EVOLUTION OF CLUSTERS OF RADIATION DEFECTS TAKING INTO ACCOUNT DIFFUSION AND
SEVERAL SECONDARY PROCESSES
for Physics of Microstructures of RUS, Nizhny Novgorod, Russia
Received May 26, 2007
In this paper we analyzed evolution of
concentration of point defects, which produced in a solid body under ion implantation.
Approximate analytical approach for description of the evolution with account
most important secondary processes (recombination of the point defects and
production of divacancies) has been proposed. The analysis has been done for
discrete in space and time ions, which have been used for irradiation sample’s
surface. We estimated dependencies of dopant concentration from depth at
different values of dose (irradiation time) and dependence of amorphization
from density of current of ions. As example we consider irradiation of silicon
by ions of neon.