CALCULATION OF THE EVOLUTION OF CLUSTERS OF RADIATION DEFECTS TAKING INTO ACCOUNT DIFFUSION AND SEVERAL SECONDARY PROCESSES

E.L. Pankratov
Institute for Physics of Microstructures of RUS, Nizhny Novgorod, Russia

Received May 26, 2007

In this paper we analyzed evolution of concentration of point defects, which produced in a solid body under ion implantation. Approximate analytical approach for description of the evolution with account most important secondary processes (recombination of the point defects and production of divacancies) has been proposed. The analysis has been done for discrete in space and time ions, which have been used for irradiation sample’s surface. We estimated dependencies of dopant concentration from depth at different values of dose (irradiation time) and dependence of amorphization from density of current of ions. As example we consider irradiation of silicon by ions of neon.