Decreasing of depth of p-n-junction in a semiconductor heterostructure

by serial radiation processing and microwave annealing

E. L. Pankratov

Nizhny Novgorod State University of Architecture and Civil Engineering,

Received July 13, 2011

 

Abstract. It has recently been shown, that manufacturing of diffusive-junction rectifiers and implanted-junction rectifiers in a semiconductor heterostructure after appropriate choosing of parameters of the structure and optimization of annealing time leads to increase of the sharpness of p-n-junction and at one time to increase the homogeneity of dopant distribution in doped area. Formation of inhomogeneity of temperature in the heterostructure by laser or microwave annealing gives us possibility to increase the both effects at one time. It has recently been shown by experiments, that predoping radiation processing of materials leads to changing of dopant diffusion in comparison with nonprocessed one. In this paper we consider the possibility to use serial radiation processing of materials of heterostructure before doping and microwave annealing of radiation defects after doping to increase the sharpness p-n-junctions and at one time to increase the homogeneity of dopant distribution in doped area in the heterostructure.

Keywords: increasing of sharpness of p-n-junctions; bipolar heterotransistors; optimization of annealing; radiation processing of materials; microwave annealing.