"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki ISSN 1684-1719, N 9, 2017

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RECOVERY OF TIME DEPENDENCE OF THE INTENSITY OF RAPIDLY CHANGING LIGHT PULSES OF ARBITRARY SHAPE

 

E. V. Nikishin, V. Y. Grishaev

National Research Mordovia State University, 68 Bolshevistskaya Str., Saransk 430005, Russia

 

The paper is received on August 11, 2017

 

Abstract. An analysis is made of the method for obtaining the dependence of the intensity on the time of the pulses acting on the system from the response of the system. The shape, frequency and intensity of the pulses vary in an arbitrary way. The pulse duration is shorter than the relaxation time of the system to a steady state. The optical impulses are reconstructed from the time dependence of the conductivity of the photoresistor. The photoconductivity kinetics in this case is determined by the dependence of the rate of generation on time and depends to a small extent on the rate of recombination of electrons and holes. Analysis of the emission of a luminescent source makes it possible to obtain a time dependence of the intensity of ultraviolet radiation causing luminescence.

Keywords: impulse excitation, recombination mechanisms, kinetics of photoconductivity, distortions, recovery of impulse.

Refeences

 1. D.V. Lang, H.G. Grimmeiss, E. Meijer, and M. Jaros, Complex nature of gold-related deep levels in siliconPhys. Rev., 1980,  Vol. 22, pp. 3917 3925.

2. A. Milnes, Deep Impurities in Semiconductors. Wiley, New York, 1973; Mir, Moscow, 1977.568 p.

 3. Bagraev N.T., Gusarov A.I., Mashkov V.A. Spin-dependent processes in one dimensional disordered dangling-bond systems in semiconductors. Sov. Phys. JETP, 1987, Vol. 65, No3, pp.548 559.  

4. Bagraev N.T., Gusarov A.I., Mashkov V.A. Spin-correlated electron transfer along broken bonds in semiconductors. Sov. Phys. JETP, 1989, Vol. 68, No 4, pp. 816  825.

5. Smith R.A., Semiconductors. Cambridge, New York, Cambridge University Press, 1978, 523p.

 6. Bagraev N.T., Mashkov V.A. A mechanism for two-electron capture at deep level defects in semiconductors. Solid State Commun., 1988, Vol.65, pp. 11111118.

7. Goryunov VA, Grishaev V.Ya., Nikishin E.V. On the change in lifetimes of charge carriers under pulsed photoexcitation in silicon with deep impurity centers.  University proceedings of Volga region. Physics and mathematics sciences2011, No 4, pp. 118 126. (In Russian)

8. Denisov B. N., Nikishin E.V. Investigations of the Kinetics of Nonequilibrium Carriers in a Semiconductor by the Average Value of the Photoconductivity under Periodic Optical Excitation. Semiconductors, 2014,  Vol. 48, No 2,  pp.163 166.

9.  Mekhitarian V.M., Partamyan H. V. High-speed photodetectors of pulsed radiation based on "inertial" photoresistors and photodiodes. Soviet Physics: Technical Physics, 1982, Vol. 52, No. 9, pp. 1900 - 1902.

10. Goryunov VA, Grishaev V.Ya., Nikishin E.V. Kinetics of photoconductivity during excitation by high-frequency pulses. University proceedings of Volga region. Physics and mathematics sciences,  2012,  No 4, pp. 242 250. (In Russian)

11. Nikishin E. V.,  Peskova E. E. Nonlinear distortion arising from the restoration of high-frequency optical excitation. Zhurnal Radioelektroniki - Journal of Radio Electronics, 2015. No 9. Available at: http:jre.cplire. ru/jre/sep15/3/text.html. (In Russian)

12. Nikishin E. V. On the Applicability Boundaries of the Restoration Method for the Temporal Shape of Modulated Optical Signals with a Frequency Higher than the Boundary Frequency of a Photoresistor. Semiconductors, 2014, Vol. 48, No. 11, pp. 15261529.

13 G. Korn and T. Korn, Mathematical Handbook for Scientists and Engineers. McGraw-Hill, New York, 1967; 1968.

14. Aksenenko MD, Baranochnikov M.L. Receivers of optical radiation. Directory. Moscow, Radio and Communication Publ., 1987. 296 p. (In Russian)

 

For citation:

E. V. Nikishin, V. Y. Grishaev. Recovery of time dependence of the intensity of rapidly changing arbitrary shape light pulses. Zhurnal Radioelektroniki - Journal of Radio Electronics, 2017, No. 9. Available at http://jre.cplire.ru/jre/sep17/3/text.pdf. (In Russian)