Journal of Radio Electronics. eISSN 1684-1719. 2025. №9

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DOI: https://doi.org/10.30898/1684-1719.2025.9.6

Photoconductive terahertz antennas
based on GaN {LT-In_xGa_1−xN/GaN}

E.R. Burmistrov^1,2, L.P. Avakyants¹, N.A. Parfent’eva², S.N. Gavrilin²

¹ M.V. Lomonosov Moscow State University,
Department of General Physics, Faculty of Physics
119991, Russia, Moscow, Leninskie Gory, 1, bld. 2

² Moscow State University of Civil Engineering,
Institute of Digital Technologies and Modeling in Construction,
Department of General Physics
129337, Russia, Moscow, Yaroslavskoye Shosse, 26

The paper was received June 3, 2025.

Abstract. A material in the form of a multilayer structure based on LT-GaN grown on Al2O3 sapphire substrates with a crystallographic direction (0001) is proposed for the manufacture of terahertz photoconductive antennas. The structures contain active layers of InxGa_1−xN/GaN. The mole fraction In in the InxGa_1−xN quantum well region is chosen to be 0.42. At an optical pumping power of 57 MW and a bias voltage of 15 V, a photoconductive antenna on an optimized {LT-InxGa_1−xN/GaN} structure emits terahertz pulses with an average power of 4.5 µW at a laser pulse repetition rate of 60 MHz. Time profiles and frequency spectra of Fourier amplitudes of terahertz pulses generated using LT-GaN-based antennas have been obtained.

Keywords: photoconductive antennas, gallium nitride, terahertz radiation, optical pumping, time forms.

Corresponding author: E.R. Burmistrov, burmistrover@my.msu.ru

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For citation:

Burmistrov E.R., Avakyants L.P., Parfent’eva N.A., Gavrilin S.N. Photoconductive terahertz antennas based on GAN {LT-INXGA1-XN/GAN}. // Journal of Radio Electronics. – 2025. – №. 9. https://doi.org/10.30898/1684-1719.2025.9.6 (In Russian)