Abstract.
Results of simulation of the physical processes in silicon Schottky-barrier
structures at microwave pulse action of electromagnetic radiation are given
within the limits of numerical model in drift-diffusion thermodynamic approach.
Power and temperature characteristics of structures in durations wide range of
the single pulse action depending on their constructive-technological
parameters are presented.
Key words:
numerical model, diffusion, drift, Schottky-barrier structure, microwave pulse,
thermal damage.