Parameters of Microwave Detectors with Low-Barrier Mott Diodes for
Matrix Imaging Arrays
V. I. Shashkin, A.
V. Murel, N. V. Vostokov
Institute for Physics of Microstructures of RAS,
Nizhny Novgorod, Russia
Received
June 27, 2013
Abstract: The paper presents experimental
results of a study of detectors millimeter-wave (94 GHz) based on low-barrier
gallium arsenide diodes made with the use of technology of the surface
isotype-delta doping. By varying the parameters of the delta-layer diodes is
possible to obtain a wide range of values of the barrier height, which is
important for microwave imaging matrix systems that require detectors working
without bias. Optimum performance of the detectors are diodes having the effective
barrier height of ~0.3 eV as shown theoretically and confirmed by experiment. Dependence
parameters of microwave detectors on the input power, signal polarization and
temperature was studied.
Key words: gallium arsenide, diode, detector, differential
resistance, responsivity.