GENERATION
OF TERAHERTZ RADIATION UNDER INTERBAND PHOTOEXCITATION OF EPITAXIAL n-GaN
LAYERS
A.O. Zahar’in 1,
A.V. Bobylev 1,2, A.V. Andrianov 1
1
A.F. Ioffe Physical
Technical Institute of RAS
2
Saint-Petersburg
State Polytechnical University (National Research University)
Received
December 17, 2012
Abstract:
We report on experimental
observation and study of terahertz (THz) luminescence under continuous-wave
interband excitation of n-GaN(Si) epitaxial layers. Properties of the THz
emission show that the emission occurs due to capture of non-equilibrium
electrons on ionized donor centers. Optical transitions of 2P → 1S type
between first excited and ground donor states give main contribution in THz
photoluminescence.
Keywords:
spectroscopy, terahertz radiation, doped
semiconductors, photoluminescence.