"JOURNAL OF RADIO ELECTRONICS"  N 12, 2012

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GENERATION OF TERAHERTZ RADIATION UNDER INTERBAND PHOTOEXCITATION OF EPITAXIAL n-GaN LAYERS

 

A.O. Zahar’in 1, A.V. Bobylev 1,2, A.V. Andrianov 1

1 A.F. Ioffe Physical Technical Institute of RAS

2 Saint-Petersburg State Polytechnical University (National Research University)
 

Received December 17, 2012

 

Abstract: We report on experimental observation and study of terahertz (THz) luminescence under continuous-wave interband excitation of n-GaN(Si) epitaxial layers. Properties of the THz emission show that the emission occurs due to capture of non-equilibrium electrons on ionized donor centers. Optical transitions of 2P → 1S type between first excited and ground donor states give main contribution in THz photoluminescence.

Keywords: spectroscopy, terahertz radiation, doped semiconductors, photoluminescence.