"JOURNAL OF RADIO ELECTRONICS"  N 12, 2012

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Influence of the electric field on the photoluminescence of the silicon nanocrystals in the SiO2 films

 

A. V. Gert 1,2, K. S. Zhuravlev1

1 Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences

1,2 Ioffe Physical Technical Institute of Russian Academy of Sciences

Received December 11, 2012

 

Abstract: In the paper the investigations of electric field influence on photoluminescence of the silicon nanocrystals formed in the dioxide silicon layer are carried out. It has been found that applying of external electric field leads to the red shift of the maximum of the photoluminescence band of the silicon nanocrystals and to the reducing of photoluminescence intensity.

Keywords: photoluminescence, silicon nanocrystal, silicon oxide film, influence of electric field.