Simulation of physical processes in semiconductor structures under the influence of the powerful microwave pulse.
Bipolar structures
S. A. Mesheryakov
State Science Research Experimental Institute of Technical Information
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The paper is received
on December 2, 2013
Abstract.
Results of simulation of the physical processes in silicon bipolar structures at
microwave pulse action of electromagnetic radiation are given within the limits
of numerical model in drift-diffusion thermodynamic approach. Power and
temperature characteristics of structures in durations wide range of the single
pulse action depending on their constructive-technological parameters are
presented.
Key words:
numerical model, diffusion, drift, bipolar structure, microwave pulse, thermal
damage.